There are toxic arsenical species such as As(III) and As(V), and arsenious species have specially strong toxicity. The strong toxicity causes contamination of groundwater and water pollution for the semiconductor production process. This study is concerned with the removal of As(III) and As(V) with various kinds of Mg/Al layered double hydroxides (LDH) containing CO32-, SO42-, Cl- and NO3- as interlayer anionic species._x000D_
The anion exchange property is different from the kind of layered double hydroxides and the Mg-Al-NO3-LDH is superior in the anion exchange property of As(III) and As(V) due to the nature of nitrate ion existing in the interlayer. The pH condition suitable for As(V) removal is 7.1 or more. If the initial conditions such as 10mg/dm3 of As(V) concentration, 7.1 of pH, 1 m3 of amount of solution and 99 per cent of removal are fixed, the required amount of Mg-Al-NO3-LDH is 0.27kg for two step-batch operations. The As(III) is suitable to oxidize to As(V) before the removal processing._x000D_
CITATION:Shibata, J and Murayama, N, 2010._x000D_
Removal of As(III) and As(V) in aqueous solution, in Proceedings XXV International Mineral Processing Congress (IMPC) 2010, pp 389-394 (The Australasian Institute of Mining and Metallurgy: Melbourne).